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IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
60
Definition
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
25
5.8
11
Single
0.10
? Advanced Process Technology
? Surface Mount (IRFZ24S, SiHFZ24S)
? Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
? 175 °C Operating Temperature
? Fast Switching
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
I 2 PAK
(TO-262)
D 2 PAK
(TO-263)
D
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
G
D
S
G
D
S
G
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D 2 PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance
S
N-Channel MOSFET
in any existing surface mount package. The D 2 PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application. The through-hole
version (IRFZ24L, SiHFZ24L) is available for low-profile
applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHFZ24S-GE3
IRFZ24SPbF
SiHFZ24S-E3
D 2 PAK (TO-263)
SiHFZ24STRR-GE3
-
-
I 2 PAK (TO-262)
-
IRFZ24LPbF
SiHFZ24L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
60
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
17
12
A
Pulsed Drain Current a, e
I DM
68
Linear Derating Factor
0.40
W/°C
Single Pulse Avalanche Energy b, e
E AS
100
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
60
3.7
4.5
- 55 to + 175
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 400 μH, R g = 25 ? , I AS = 17 A (see fig. 12).
c. I SD ? 17 A, dI/dt ? 140 A/μs, V DD ? V DS , T J ? 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90366
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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